Industrie Flashspeicher

DOM USB 8GB SLC

Mozaïk Storage Ref. : PMS-4168

Die Referenz SFUI008GJ1AE1TO-I-DB-2B1-STD aus der Produktreihe U-500 Series des Herstellers Swissbit AG ist auch mit anderen Speicherkapazitäten und Temperaturbereichen erhältlich. Wir stehen Ihnen gerne zur Verfügung, um Ihre Fragen zu beantworten und Angebote zu erstellen. Zögern Sie nicht, uns zu kontaktieren:
Beschreibung
  • HerstellerArt. : SFUI008GJ1AE1TO-I-DB-2B1-STD
  • Serie : U-500 Series
  • Hersteller : Swissbit AG
  • Betriebstemp. : -40°C ~ +85°C
  • Form factor : 2.54mm pitch

Produktspezifikationen

  • Hersteller Swissbit AG
  • Herstellerartikelnummer SFUI008GJ1AE1TO-I-DB-2B1-STD
  • Unterkategorie DOM
  • Interface USB 3.1
  • Flashtype SLC
  • Form factor 2.54mm pitch
  • Kapazität 8 GB
  • Lesegeschwindigkeit (max.) 163 MB/s
  • Schreibgeschwindigkeit (max.) 70 MB/s
  • TBW (max.) 806 TB
  • MTBF 3 000 000 Stunden
  • S.M.A.R.T. Funktionen Ja
  • PowerLossProtector Ja
  • Betriebstemperatur -40°C ~ +85°C
  • Lagertemperatur -40°C ~ +85°C
  • Chipset Industrial Grade
  • Betriebsspannung 3.3 V
    5.0 V
  • Vibrationen 50G
  • Schocks 1500G
  • Zusätzliche Informationen USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal
    Fully compliant with USB specification 3.1 Gen 1 (SuperSpeed
    5Gb/s burst)
    Fully backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst)
    Dimension of 26.65 x 36.8mm
    2.54mm or 2.00mm connector with keyed pin9
    Mounting hole electrically not connected (optional grounded)
    Fixed drive (USB hard drive - optional removable)
    LED for operation indication
    Write protect switch (optional)
    Diagnostic features with Life Time Monitoring tool support
    Firmware update in field possible
    High performance USB3.1 specification
    Up to 1100 IOPS write and 3000 IOPS read (4KByte transfers)
    Up to 90 MBytes/s sequential write and 175 MBytes/s read speed
    Power Supply: (Low-power CMOS technology)
    3.1 to 5.5V operating voltage
    Optimized FW algorithms especially for high read access and long data retention applications
    Patented power-off reliability technology
    Near Miss ECC technology
    Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary.
    Read Disturb Management
    The read commands per block are monitored and the content is refreshed when critical levels are reached.
    Wear Leveling technology
    Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result the maximum write endurance of the device is guaranteed.
    Data Care Management
    The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects.
    UBER <10-17
    High reliability
    SLC NAND Flash with highest program erase cycles per block
  • Zertifikate EMC/ CE / FCC / RoHS / WEEE/ REACh
  • Gewicht 5 g
  • Abmessungen 36.8mm x 26.65mm

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