Industrie Flashspeicher

DOM USB 8GB SLC

Mozaïk Storage Ref. : PMS-4168

Die Referenz SFUI008GJ1AE1TO-I-DB-2B1-STD aus der Produktreihe U-500 Series des Herstellers Swissbit AG ist auch mit anderen Speicherkapazitäten und Temperaturbereichen erhältlich. Wir stehen Ihnen gerne zur Verfügung, um Ihre Fragen zu beantworten und Angebote zu erstellen. Zögern Sie nicht, uns zu kontaktieren:

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Beschreibung

HerstellerArt. : SFUI008GJ1AE1TO-I-DB-2B1-STD
Serie : U-500 Series
Hersteller : Swissbit AG
Betriebstemp. : -40°C ~ +85°C
Form factor : 2.54mm pitch

Produktspezifikationen

Hersteller Swissbit AG
Herstellerartikelnummer SFUI008GJ1AE1TO-I-DB-2B1-STD
Unterkategorie DOM
Interface USB 3.1
Flashtype SLC
Form factor 2.54mm pitch
Kapazität 8 GB
Lesegeschwindigkeit (max.) 163 MB/s
Schreibgeschwindigkeit (max.) 70 MB/s
TBW (max.) 806 TB
MTBF 3 000 000 Stunden
S.M.A.R.T. Funktionen Ja
PowerLossProtector Ja
Betriebstemperatur -40°C ~ +85°C
Lagertemperatur -40°C ~ +85°C
Chipset Industrial Grade
Betriebsspannung 3.3 V
5.0 V
Vibrationen 50G
Schocks 1500G
Zusätzliche Informationen USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal
Fully compliant with USB specification 3.1 Gen 1 (SuperSpeed
5Gb/s burst)
Fully backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst)
Dimension of 26.65 x 36.8mm
2.54mm or 2.00mm connector with keyed pin9
Mounting hole electrically not connected (optional grounded)
Fixed drive (USB hard drive - optional removable)
LED for operation indication
Write protect switch (optional)
Diagnostic features with Life Time Monitoring tool support
Firmware update in field possible
High performance USB3.1 specification
Up to 1100 IOPS write and 3000 IOPS read (4KByte transfers)
Up to 90 MBytes/s sequential write and 175 MBytes/s read speed
Power Supply: (Low-power CMOS technology)
3.1 to 5.5V operating voltage
Optimized FW algorithms especially for high read access and long data retention applications
Patented power-off reliability technology
Near Miss ECC technology
Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary.
Read Disturb Management
The read commands per block are monitored and the content is refreshed when critical levels are reached.
Wear Leveling technology
Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result the maximum write endurance of the device is guaranteed.
Data Care Management
The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects.
UBER <10-17
High reliability
SLC NAND Flash with highest program erase cycles per block
Zertifikate EMC/ CE / FCC / RoHS / WEEE/ REACh
Gewicht 5 g
Abmessungen 36.8mm x 26.65mm